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BSS84W
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 6)
Symbol
V DSS
V DGR
Value
-50
-50
Units
V
V
Gate-Source Voltage
Drain Current (Note 6)
Pulsed Drain Current (Note 6)
Continuous
Continuous
V GSS
I D
I DM
? 20
-130
-1
V
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
-50
?
?
?
?
-75
?
?
?
?
?
-1
-2
-100
? 10
V
μA
μA
nA
nA
V GS = 0V, I D = -250μA
V DS = -50V, V GS = 0V, T J = +25°C
V DS = -50V, V GS = 0V, T J = +125°C
V DS = -25V, V GS = 0V, T J = +25°C
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS(ON)
g FS
-0.8
?
0.05
-1.6
6
?
-2.0
10
?
V
?
S
V DS = V GS , I D = -1mA
V GS = -5V, I D = -0.1A
V DS = -25V, I D = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
?
45
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
?
?
25
12
pF
pF
V DS = -25V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
10
18
?
?
ns
ns
V DD = -30V, I D = -0.27A,
R GEN = 50 ? , V GS = -10V
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BSS84W
Document number: DS30205 Rev. 15 - 2
2 of 5
www.diodes.com
September 2013
? Diodes Incorporated
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